Products
GalnP₂/InGaAs/Ge Structure, stable performance; can work stably under 500 to 1000 times sunlight;
Struction ：InGaP/lnGaAs/Ge, Aperture area: 98.01mm², Open circuit voltage: 2.5V
Material: GaInP2/GaAs/Ge on Ge substrate, AR-coating ： TiOX/Al2O3,
The standard design voltage is 4.5V and the operating current is 12.5mA
The standard design voltage is 4.5V and the operating current is 14.8mA
Output power per square meter: 250W, power-to-weight ratio: 1W/g, operating temperature range -80°C to 100°C
Single junction GaAs Cell, operating current 24.6mA, operating voltage 0.89V, power 21.9mw
Double-junction GaAs Cell (laser), thickness: 30μm, characteristic wavelength: 808nm
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