Space Solar Cell 4cm x 6cm
Efficiency 30%
Description
Material: triple junction gallium arsenide (GaInP2/GaAs/GeGe)
Substrate GaAs cell size: (60.15±0.05)mm*(40.15±0.05)mm
GaAs cell area: 24.15c㎡
GaAs cell thickness: 0.36±0.02mm
Antireflection coating: TiOx/Al2O3
Cover glass: KFB1
Thickness: 120±20μm
Interconnect material: silver/silver plated
Interconnect thickness: 20/25μ
光电性能
| Material | GaInP2/GaAs/Ge |
| Average Open Circuit Current (mV) | 2740 |
| Average Short Circuit Jsc(mA/cm2) | 17.4 |
| Voltage @ Max Power Vm(mV) | 2450 |
| >Current @ Max Power Jm(mA/cm2) | 16.6 |
| Average Efficiency η bare(1353W/m2) | 30% |
| Average Filling Factor | 0.850 |
Electrical performance data （AM0,1SUN,1353w/㎡,25℃）
The triple-junction GaAs solar cell uses germanium as the substrate and consists of three N/P sub-cells connected in series through a tunnel junction. It is equipped with independent silicon diodes, interconnects, and glass covers. It has high efficiency and strong radiation resistance. Application areas: low-altitude aircraft, medium-orbit aircraft, high-altitude aircraft (nano-satellites, small satellites, commercial satellites, large satellites, drones, etc.)
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