Efficiency 30%
Base Material: GaInP2/GaAs/Ge on Ge substrate
AR-coating: TiOX/Al2O3
Dimensions: (30.15±0.05)mm×(40.15±0.05)mm
Cell Area: 12.15cm2
Thickness: 0.36±0.01mm
Coverglass: KFB 120
Coverglass thickness: 120±20um
Interconnector thickness: 17µm
Material | GaInP2/GaAs/Ge |
Average Open Circuit Current (mV) | 2740 |
Average Short Circuit Jsc(mA/cm2) | 17.4 |
Voltage @ Max Power Vm(mV) | 2450 |
Current @ Max Power Jm(mA/cm2) | 16.6 |
Average Efficiency η bare(1353W/m2) | 30% |
Average Filling Factor | 0.850 |
Electrical performance data (AM0,1SUN,1353w/㎡,25℃)
The triple-junction GaAs solar cell uses germanium as the substrate and consists of three N/P sub-cells connected in series through a tunnel junction. It is equipped with independent silicon diodes, interconnects, and glass covers. It has high efficiency and strong radiation resistance. Application areas: low-altitude aircraft, medium-orbit aircraft, high-altitude aircraft (nano-satellites, small satellites, commercial satellites, large satellites, drones, etc.)
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