Double Juntion GaAs Solar Cell 11.5mm x 11.2mm
Efficiency 38%
Description
Double junction GaAs Cell(laser)
Specifications: 11.5mm*11.2mm
Thickness: 30μm
Characteristic wavelength: 808nm
Conversion efficiency: (@1.2W/cm²) ≥38%
Output power: (@1.2W/cm²) 550mW
Open circuit voltage: (@1.2W/cm²) ≥2.25V
Working voltage: (@1.2W/cm²) ≥2V
Short circuit current: (@1.2W/cm²) ≥300mA
Working current: (@1.2W/cm²) ≥275mA
A double-junction gallium arsenide GaAs cell semiconductor device that converts laser light energy into electrical energy. The cell generates electricity by absorbing 808nm wavelength monochromatic light (laser) light source. Double Juntion GaAs cell have the advantages of high efficiency, high power density, excellent power-to-weight ratio, flexibility, and strong plasticity, and can be widely used in laser power generation, wireless charging, long-distance energy transmission and other application fields.
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